Western Electric 2N29  
Written by Accutron on 2017-01-30  

The Western Electric 2N29 is an early production example of a germanium NPN grown junction transistor. In 1955, Western Electric introduced their first two production grown junction transistors: the 2N27 and 2N28. The 2N29 followed in 1957. All three of these devices were derived from the Bell Labs M-1752 grown junction prototype, but the 2N29 was considered suitable for military use.

Prior to Fairchild's introduction of the planar transistor in 1959, semiconductors lacked a protective silicon dioxide passivation layer to protect against internal contamination of the base-collector junction. Many of these early semiconductors featured a hermetically sealed metal canister, often with an evacuation nipple.

Western Electric 2N29 Datasheet (PDF)

Western Electric 2N29 germanium NPN grown junction transistor.

2N29, underside construction.

This article is part of the [Discrete Semiconductors] exhibit.

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